Explore more products by
On
On Transistor IGBT NGTB50N65FL2 50N65FL2 650V 50A
Satisfaction Guarantee
Protected Purchase — Receive the product you expected or get your money back.
All tariffs & duties are already pre-paid and pre-cleared. No additional payments will be required on delivery.
- Shipping Time:
- Ships within 2-5 business days after your purchase. We will receive your product at our warehouse and carefully package it for international shipping.
- SKU:
- MLA884449481
- Condition:
- New
- Weight:
- 0.07 KGS
FREE delivery currently available in the USA by with FedEx
✕
USA: Arrives in 2–3 business days.
Europe: Arrives in 5–9 business days.
Israel: Arrives in 7–9 business days.
Australia & New Zealand: Arrives in 9–12 business days.
Rest of the World: Arrives in 8–12 business days.
Additional shipping options may be available at checkout.
All orders are shipped with trusted carriers: FedEx, UPS, and DHL.
Description
Shop Transistor Igbt Ngtb50n65fl2 50n65fl2 50n65 650v 50a and more Transistores at Latinafy.comDiscover the powerful On Transistor IGBT NGTB50N65FL2, designed for efficiency and reliability. This N-channel IGBT features a maximum collector-emitter voltage of 650V and can handle up to 50A of collector current, making it ideal for various applications. With a total device dissipation of 417W, it boasts a saturation voltage of just 1.8V for optimal performance. The transistor operates effectively at a junction temperature of 175°C, providing stability even in demanding environments. Experience superior functionality with quick rise times of only 47ns.Introducing the On Transistor IGBT NGTB50N65FL2, a cutting-edge component designed for high-performance applications. This N-channel IGBT is capable of withstanding a maximum collector-emitter voltage of 650V while delivering an impressive collector current of up to 50A. With a total dissipation of 417W and a saturation voltage of 1.8V, it guarantees optimal efficiency in your electrical circuits. The junction temperature reaches a maximum of 175°C, ensuring durability in extreme conditions.
Equipped with a fast rise time of just 47ns, the NGTB50N65FL2 enhances the switching speeds of your devices. Additionally, it features a collector capacitance of 252pF, making it suitable for various electronic applications, from motor drives to power conversion. With its exceptional specifications, this IGBT transistor is essential for those looking to elevate their projects with reliable and robust electronic components. Trust in the quality of On products and experience the difference in your electronic circuits today.Usage ideas
This transistor is ideal for use in high-performance motor drives, power inverters, and switch-mode power supplies. It can also be applied in induction heating systems and solar inverters, making it a versatile choice for various electronic projects. Consider using the NGTB50N65FL2 in applications requiring efficient switching and high voltage handling.Frequently asked questionsWhat is the maximum voltage rating of this transistor?: The maximum collector-emitter voltage is 650V.What is the current handling capability?: This transistor can handle up to 50A of collector current.What is the significance of the saturation voltage?: The saturation voltage is 1.8V, which indicates the voltage drop across the collector-emitter junction when the transistor is fully on, contributing to overall efficiency.Can this transistor function at high temperatures?: Yes, it can operate effectively with a maximum junction temperature of 175°C.- Brand: On- Item Condition: New- Model: TRANSISTOR- SKU: ET00856- Units per Pack: 1- Transistor Code: NGTB50N65FL2- Max Supported Voltage: 650V- Max Supported Current: 50AVendor listing title: Transistor Igbt Ngtb50n65fl2 50n65fl2 50n65 650v 50a
View AllClose
Additional Information
Origin: |
Argentina |
Vendor: |
Shop on Mercado Libre Argentina |
Brand: |
On |