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Introducing the Original IRFB4227 N-Channel MOSFET Transistor, designed for high-performance applications. This powerful component features an impressive maximum power dissipation of 330 W and can handle drain currents of up to 65 A. With a drain-source voltage rating of 200 V and a gate-source voltage of 30 V, it ensures robust operation under demanding conditions. The IRFB4227 is packaged in a TO220AB case for ease of integration into various electronic projects. Ideal for enthusiasts and professionals alike, this transistor delivers reliability in your next circuit design.

Elevate your electronics projects with the Original IRFB4227 N-Channel MOSFET Transistor. This exceptional component boasts a maximum power dissipation of 330 W, making it suitable for heavy-duty applications. Designed for N-Channel control, it supports a maximum drain-source voltage of 200 V, ensuring reliable performance even under high-voltage conditions. The transistor has a maximum gate-source voltage of 30 V, with a quick gate-threshold voltage of just 5 V, allowing for efficient switching capabilities. It can handle a maximum drain current of 65 A, which is essential for demanding power applications. Temperature management is vital in any electronic design, and the IRFB4227 excels in this area, with a maximum junction temperature rating of 175 °C. With a total gate charge of 70 nC and a rise time of merely 20 nS, this transistor is engineered for rapid response and high efficiency. Additionally, its drain-source capacitance of 460 pF minimizes power loss in switching operations, while the maximum on-state resistance ensures optimal current flow through the device. Whether you are working on power supplies, motor drivers, or any other high-performance circuits, the IRFB4227 is an essential component to consider in your design.

Usage ideas The IRFB4227 transistor is perfect for a variety of applications including power management in renewable energy systems, motor control in robotic systems, and high-efficiency power supplies. It can also be used in audio amplifiers for improved power output and signal fidelity, or in automotive applications to control power systems efficiently.

Frequently asked questions
Can I use this transistor for high-voltage applications?: Yes, the IRFB4227 can handle a maximum drain-source voltage of 200 V, making it suitable for high-voltage applications.
What is the maximum current this MOSFET can handle?: The IRFB4227 can handle a maximum drain current of 65 A, which is quite substantial for various applications.
What type of package does this transistor come in?: This transistor is packaged in a TO220AB case, which is standard for easy integration into circuit designs.

- Marca: ORIGINAL
- Código universal de producto: 6908235894767
- Condición del ítem: Novo
- Modelo: IRFB 4227
- SKU: IRFB4227 c1
- Es kit: Não
- Unidades por pack: 1
- Código del transistor: IRFB4227
- Voltaje máximo soportado: 200 V
- Corriente máxima soportada: 65 A
- Tipo de encapsulado: TO220AB
- Potencia máxima soportada: 330 W
- Polaridad: N-Channel

Vendor listing title: Transistor Fet Mosfet Irfb4227 (1 Peça) Irfb 4227 Irf B4227