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The Original Transistor Fet Mosfet IRF8010 is an essential component for advanced electronic projects and applications. With a robust maximum power dissipation of 260 W, this N-channel MOSFET guarantees high performance under demanding conditions. It features a maximum drain current of 80 A and a maximum drain-source voltage of 100 V, making it highly versatile for various circuit designs. The IRF8010 is easy to integrate into your projects with a compact TO220AB package. Count on reliable operation under extreme temperatures, thanks to its maximum junction temperature of 175 °C.

The Original Transistor Fet Mosfet IRF8010 is engineered to excel in demanding electronic environments. This N-channel MOSFET is designed with precision, providing outstanding performance with a maximum power dissipation of 260 W. It can handle a remarkable maximum drain current of 80 A and operates efficiently with a maximum drain-source voltage of 100 V, making it an ideal choice for high-power applications. The convenient TO220AB package format allows for easy installation and integration into various circuits, ensuring that you can maximize your design's potential. In addition to its impressive electrical specifications, the IRF8010 also boasts a maximum junction temperature of 175 °C, which enhances its robustness and reliability in challenging conditions. Designers will appreciate its total gate charge capability of 81 nC and a low maximum drain-source on-state resistance of just 0.015 Ohm. With a rise time of only 130 nS and a drain-source capacitance of 480 pF, this MOSFET demonstrates excellent switching performance. Whether you're creating power supplies, motor drivers, or signal amplifiers, the IRF8010 will be a valuable asset for both hobbyists and professionals alike.

Usage ideas This MOSFET is perfect for applications in power electronics, such as power supplies, motor controllers, or amplifiers. Use the IRF8010 to build high-efficiency circuits, enhance the performance of your robotics projects, or create custom electronic design prototypes. Its features are ideal for anyone working on RF applications or high-frequency switching tasks. Ideal for engineers and DIY enthusiasts keen on maximizing their project capabilities, this transistor can handle demanding loads with ease.

Frequently asked questions
What is the maximum voltage for the IRF8010?: The IRF8010 can handle a maximum drain-source voltage of 100 V.
What is the maximum current this MOSFET can support?: It can support a maximum drain current of 80 A.
In what type of package is the IRF8010 available?: The IRF8010 comes in a TO220AB package.
What is the maximum power dissipation for this transistor?: The IRF8010 has a maximum power dissipation rating of 260 W.
What is the maximum junction temperature?: The maximum junction temperature for the IRF8010 is 175 °C.

- Marca: ORIGINAL
- Código universal de producto: 6901974459044
- Condição do item: Novo
- Modelo: IRF 8010
- SKU: IRF8010 c4
- É kit: Sim
- Homologação Anatel Nº: 2352012156
- Unidades por pack: 1
- Código del transistor: IRF8010
- Voltaje máximo soportado: 1V
- Corriente máxima soportada: 1 A
- Tipo de encapsulado: TO-220
- Potência máxima suportada: 1 W
- Polaridade: NPN

Vendor listing title: Transistor Fet Mosfet Irf8010 (4 Peças) Irf 8010 Irf-8010