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VOG CENTER Transistor IGBT RJP30H1 360V 30A NPN TO220

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SKU:
MLB2601620031
Condition:
New
Weight:
0.13 KGS
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Was: US $27.35
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Description

Shop ((( Original ))) Transistor Igbt Rjp30h1 360v 30a Npn To220 and more Transistores at Latinafy.com

Introducing the RJP30H1DPD Silicon N Channel IGBT, designed for high-speed power switching applications. This innovative component features advanced Trench Gate technology and a thin wafer design, making it ideal for demanding electronic projects. With a collector-emitter saturation voltage of just 1.5V and a low leakage current, this transistor ensures efficient performance. Its high-speed switching capabilities boast a typical turn-on time of 80 ns and turn-off time of 150 ns. Perfect for various applications, this original and brand new IGBT is a must-have for your next electronic project.

The RJP30H1DPD Silicon N Channel IGBT is a reliable and efficient solution for high-speed power switching applications. With remarkable specifications, this transistor incorporates advanced Trench Gate and Thin Wafer technology from the G6H-II series, ensuring optimal performance in various electronic circuits. The IGBT's low collector-emitter saturation voltage of 1.5V minimizes power loss, while its low leakage current ensures that your circuit maintains efficiency even at higher voltages. One of the standout features of the RJP30H1 is its rapid switching capabilities, which include a typical turn-on time of just 80 ns and a turn-off time of 150 ns. This makes it an excellent choice for applications that require quick responsiveness and high-frequency operations. Constructed with the discerning engineer in mind, this original and completely new transistor comes in a TO-220 package, offering easy integration into your existing projects. Whether you are working on a plasma TV YSUS board or any electronic circuit demanding high current and voltage handling, the RJP30H1 is built to meet those needs with excellence.

Usage ideas Utilize the RJP30H1 for high-speed power switching in plasma TV applications, motor control systems, or inverters. It's perfect for projects requiring efficient energy handling and rapid switching capabilities. Consider it for use in DIY electronic circuits where robust performance is essential.

Frequently asked questions
Is the RJP30H1 suitable for use in a plasma TV YSUS board?: Yes, this transistor is excellent for plasma TV applications.
What is the power rating for the RJP30H1?: According to the datasheet, it is rated for 20W.
Do you have the RJP30H1 available in original form?: Absolutely! Our units are original and new.
Does the transistor come with pre-bent legs?: Yes, the RJP30H1 comes with pre-bent legs just like shown in the images.

- Brand: VOG CENTER
- Item Condition: New
- Model: RJP30H1 RJP 30H1 30 H1 TO-220 Original New
- SKU: ADR - To220
- Sales Format: Unit
- Units Per Pack: 1
- Transistor Code: RJP30H1
- Maximum Voltage Supported: 360V
- Maximum Current Supported: 30A
- Package Type: TO-220
- Maximum Power Supported: 20W
- Polarity: NPN

Vendor listing title: ((( Original ))) Transistor Igbt Rjp30h1 360v 30a Npn To220
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Additional Information

Origin:
Brazil
Vendor:
Shop on Mercado Libre Brazil
Brand:
Vog Center
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